ElFys has contributed to a study on high-performance germanium photodiodes. The findings were published in a peer-reviewed article titled "Near-infrared germanium PIN-photodiodes with>1A/W responsivity," was published in the Nature Portfolio journal Light: Science & Applications on January 1, 2025. The study was led by researchers from Aalto University and co-authored by ElFys scientists Dr. Antti Haarahiltunen and Dr. Toni Pasanen.
The research team developed an innovative infrared photodiode that demonstrates a 35% increase in responsivity at 1.55 µmcompared to conventional germanium-based components.
Performance tests revealed that the proof-of-concept photodiode not only surpassed existing germanium photodiodes but also out performed commercial indium gallium arsenide photodiodes in responsivity. This cutting-edge technology efficiently captures infrared photons and operates effectively across a broad range of wavelengths.Furthermore, the photodiodes can be fabricated using existing manufacturing facilities, enabling seamless integration into various technologies.
This collaboration highlights ElFys' dedication to driving innovation in optical sensing technology through strong academic partnerships.