ElFys is proud to announce the official launch of its groundbreaking 4-quadrant detector, now available for order. The 4-quadrant detector from ElFys leverages the company's proprietary Black Silicon technology, which has already garnered acclaim for its exceptional photosensitivity and quantum efficiency. By applying the cutting-edge approach to a quadrant detector design, ElFys has created a detector that combines high responsivity, low dark current, and fast response times with precise positional information.
The ElFys 4-quadrant detector combines high responsivity, low dark current, and fast response times with precise positional information. Its high sensitivity in the NIR range makes it ideal for:
The ElFys 4-quadrant detector's high performance is established by the company's expertise in black silicon technology. This innovative approach allows for near-ideal external quantum efficiency across the UV-VIS-NIR spectrum, ensuring that virtually every incident photon is captured and converted into a measurable signal.
The high quantum efficiency, combined with the detector's low noise characteristics, enables superior performance when detecting faint signals. The technology's potential to enhance existing applications and enable new possibilities in NIR detection is generating significant interest across multiple industries.
The launch of ElFys' 4-quadrant detector represents a significant leap forward in NIR detection technology. By combining high sensitivity, precise positional information, and the benefits of black silicon technology, ElFys aims to address longstanding challenges in fields ranging from laser guidance to optical communication. As researchers and engineers eagerly await the opportunity to integrate this innovative detector into their systems, the future of NIR detection looks brighter than ever.
ElFys, Inc. was founded in 2017 and is located in Espoo, Finland. The company is based on long-term research work on photodetector technologies at Aalto University. Our core team consists of former senior researchers, engineering leaders and business professionals. The company utilizes the state-of-the-art processing facilities at Micronova Nanofabrication Center in Espoo, Finland: 2600 square meters of CMOS compatible facilities suitable for both R&D and semi-mass production. For high-volume mass production, ElFys has partnered with an external, European foundry.
ElFys provides light sensors with sensitivity better than anything seen before, literally catching every ray of light. The technology greatly improves any light sensing application ranging from health monitoring to analytical instrumentation and security X-ray imaging. The superior performance of ElFys photodetectors is based on an inventive combination of modern MEMS nanotechnology and atomic layer deposition. The core technologies are patented and in the possession of the company. www.elfys.fi
Most light sensing technologies capture about two thirds of light rays, whereas ElFys’ technology can capture all of them. The Black Silicon Photodiode provides superior sensitivity over a wide spectral range, especially in the ultraviolet, as well as an ultra-wide viewing angle. The increased sensitivity provides improvement potential to any applications where light needs to be measured.
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