ElFys black silicon photodiode technology
& benefits in NIR optimized 4-quadrant detector
Join ElFys for an enlightening webinar exploring the advantages of black silicon technology in light sensing. ElFys CEO, Dr. Mikko Juntunen, along with our Scientist and co-founder, Dr. Toni Pasanen, will share the unique benefits of the technology and discuss optimization of silicon photodiodes for near infrared (NIR) wavelengths. We will also present results from our NIR optimized
4-quadrant detector product, which was recently officially released in Photonics West 2025.
Key Topics:
- Benefits of ElFys Black Silicon technology in light sensing
- Optimization of silicon photodiodes for NIR wavelengths
- Performancemetrics of NIR-optimized 4-Quadrant detector using ElFys black silicon technology
About the Presenters:
Dr. Mikko Juntunen, CEO of ElFys, brings extensive expertise in photonics technology. Alongside him, Dr. Toni Pasanen, Scientist and Co-founder of ElFys, will share the unique benefits of the technology and discuss optimization of silicon photodiodes for near infrared (NIR) wavelengths.
About ElFys: ElFys provides light sensors with sensitivity better than anything seen before, literally catching every ray of light. The technology greatly improves any light sensing application ranging from health monitoring to analytical instrumentation and security X-ray imaging. The superior performance of ElFys photodetectors is based on an inventive combination of modern MEMS nanotechnology and atomic layer deposition. The core technologies are patented and in the possession of the company.
About ElFys' patented technology:
Most light sensing technologies capture about two thirds of light rays, whereas ElFys’ technology can capture all of them. The Black Silicon Induced Junction Photodiode provides superior sensitivity over a wide spectral range, especially in the ultraviolet, as well as an ultra-wide viewing angle. The increased sensitivity provides improvement potential to any applications where light needs to be measured.